摘要
The temporal response of the electroluminescence at the Si band gap energy from a metal-oxide-silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley-Read-Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm2. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers.
原文 | 英語 |
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頁(從 - 到) | 2264-2266 |
頁數 | 3 |
期刊 | Applied Physics Letters |
卷 | 79 |
發行號 | 14 |
DOIs | |
出版狀態 | 已發佈 - 2001 10月 1 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 物理與天文學(雜項)