Carrier lifetime measurement on electroluminescent metal-oxide-silicon tunneling diodes

Miin Jang Chen*, Ching Fuh Lin, M. H. Lee, S. T. Chang, C. W. Liu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

10 引文 斯高帕斯(Scopus)

摘要

The temporal response of the electroluminescence at the Si band gap energy from a metal-oxide-silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley-Read-Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm2. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers.

原文英語
頁(從 - 到)2264-2266
頁數3
期刊Applied Physics Letters
79
發行號14
DOIs
出版狀態已發佈 - 2001 10月 1
對外發佈

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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