摘要
A novel fabrication method of buried-heterostructure (BH) midinfrared quantum cascade lasers (QCLs) by using non-selective regrowth of iron-doped indium phosphide (InP) (Fe:InP), around deeply etched laser ridges, via metal-organic chemical vapour deposition (MOCVD) and planarisation via chemical polishing is reported. Owing to better heat dissipation, the fabricated 4.75 μm emitting QCLs exhibit about three-fold enhancement in maximum output power under continuous-wave operation at room temperature (T = 20°C) compared with that from lasers without the regrown InP. The demonstrated fabrication method provides a more flexible route to realising BH QCLs by removing strict requirements on the etched-ridge sidewall profile, as well as on the physical dimensions of the dielectric mask for the regrowth via MOCVD. The method can be further employed for making large-emitting aperture, closely packed arrays of QCLs, with planarised geometry, for coherent-power scaling.
原文 | 英語 |
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頁(從 - 到) | 1098-1100 |
頁數 | 3 |
期刊 | Electronics Letters |
卷 | 51 |
發行號 | 14 |
DOIs | |
出版狀態 | 已發佈 - 2015 7月 9 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 電氣與電子工程