The growth of InAsN alloys with various nitrogen contents on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy is reported. The structural, electrical and optical properties of the alloy film are also investigated by using DXRD, Hall, and FTIR measurements. We found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed.
|出版狀態||已發佈 - 2001|
|事件||2001 International Conference on Indium Phosphide and Related Materials - Nara, 日本|
持續時間: 2001 5月 14 → 2001 5月 18
|會議||2001 International Conference on Indium Phosphide and Related Materials|
|期間||2001/05/14 → 2001/05/18|
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