Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy

D. K. Shih*, H. H. Lin, L. W. Song, T. Y. Chu, T. R. Yang

*此作品的通信作者

研究成果: 會議貢獻類型會議論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

The growth of InAsN alloys with various nitrogen contents on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy is reported. The structural, electrical and optical properties of the alloy film are also investigated by using DXRD, Hall, and FTIR measurements. We found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed.

原文英語
頁面555-558
頁數4
出版狀態已發佈 - 2001
事件2001 International Conference on Indium Phosphide and Related Materials - Nara, 日本
持續時間: 2001 5月 142001 5月 18

會議

會議2001 International Conference on Indium Phosphide and Related Materials
國家/地區日本
城市Nara
期間2001/05/142001/05/18

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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