Breakdown model and lifetime projection for thin gate oxide MOS devices

Chuan H. Liu; Robert O. Grondin; Thomas A. DeMassa; Julian J. Sanchez

Breakdown model and lifetime projection for thin gate oxide MOS devices

Chuan H. Liu^*
, Robert O. Grondin
, Thomas A. DeMassa
, Julian J. Sanchez

^*此作品的通信作者

研究成果: 雜誌貢獻 › 會議論文 › 同行評審

摘要

An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.

原文	英語
頁（從 - 到）	78-82
頁數	5
期刊	Biennial University/Government/Industry Microelectronics Symposium - Proceedings
出版狀態	已發佈 - 1997
對外發佈	是
事件	Proceedings of the 1997 12th Biennial University/Government/Industry Microelectronics - Rochester, NY, USA 持續時間: 1997 7月 20 → 1997 7月 23

ASJC Scopus subject areas

電氣與電子工程

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@article{46709857d4b14152a5d4bdc93aadd801,

title = "Breakdown model and lifetime projection for thin gate oxide MOS devices",

abstract = "An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.",

author = "Liu, \{Chuan H.\} and Grondin, \{Robert O.\} and DeMassa, \{Thomas A.\} and Sanchez, \{Julian J.\}",

year = "1997",

language = "English",

pages = "78--82",

journal = "Biennial University/Government/Industry Microelectronics Symposium - Proceedings",

issn = "0749-6877",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 12th Biennial University/Government/Industry Microelectronics ; Conference date: 20-07-1997 Through 23-07-1997",

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TY - JOUR

T1 - Breakdown model and lifetime projection for thin gate oxide MOS devices

AU - Liu, Chuan H.

AU - Grondin, Robert O.

AU - DeMassa, Thomas A.

AU - Sanchez, Julian J.

PY - 1997

Y1 - 1997

N2 - An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.

AB - An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.

UR - https://www.scopus.com/pages/publications/0031376920

UR - https://www.scopus.com/pages/publications/0031376920#tab=citedBy

M3 - Conference article

AN - SCOPUS:0031376920

SN - 0749-6877

SP - 78

EP - 82

JO - Biennial University/Government/Industry Microelectronics Symposium - Proceedings

JF - Biennial University/Government/Industry Microelectronics Symposium - Proceedings

T2 - Proceedings of the 1997 12th Biennial University/Government/Industry Microelectronics

Y2 - 20 July 1997 through 23 July 1997

ER -

Breakdown model and lifetime projection for thin gate oxide MOS devices

摘要

ASJC Scopus subject areas

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