摘要
An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.
原文 | 英語 |
---|---|
頁(從 - 到) | 78-82 |
頁數 | 5 |
期刊 | Biennial University/Government/Industry Microelectronics Symposium - Proceedings |
出版狀態 | 已發佈 - 1997 |
對外發佈 | 是 |
事件 | Proceedings of the 1997 12th Biennial University/Government/Industry Microelectronics - Rochester, NY, USA 持續時間: 1997 7月 20 → 1997 7月 23 |
ASJC Scopus subject areas
- 電氣與電子工程