Breakdown model and lifetime projection for thin gate oxide MOS devices

Chuan H. Liu*, Robert O. Grondin, Thomas A. DeMassa, Julian J. Sanchez

*此作品的通信作者

研究成果: 雜誌貢獻會議論文同行評審

摘要

An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.

原文英語
頁(從 - 到)78-82
頁數5
期刊Biennial University/Government/Industry Microelectronics Symposium - Proceedings
出版狀態已發佈 - 1997
對外發佈
事件Proceedings of the 1997 12th Biennial University/Government/Industry Microelectronics - Rochester, NY, USA
持續時間: 1997 7月 201997 7月 23

ASJC Scopus subject areas

  • 電氣與電子工程

指紋

深入研究「Breakdown model and lifetime projection for thin gate oxide MOS devices」主題。共同形成了獨特的指紋。

引用此