Breakdown model and lifetime projection for thin gate oxide MOS devices

Chuan-Hsi Liu*, Robert O. Grondin, Thomas A. DeMassa, Julian J. Sanchez

*此作品的通信作者

研究成果: 雜誌貢獻會議論文同行評審

摘要

An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.

原文英語
頁(從 - 到)78-82
頁數5
期刊Biennial University/Government/Industry Microelectronics Symposium - Proceedings
出版狀態已發佈 - 1997 十二月 1
事件Proceedings of the 1997 12th Biennial University/Government/Industry Microelectronics - Rochester, NY, USA
持續時間: 1997 七月 201997 七月 23

ASJC Scopus subject areas

  • 電氣與電子工程

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