An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.
|頁（從 - 到）||78-82|
|期刊||Biennial University/Government/Industry Microelectronics Symposium - Proceedings|
|出版狀態||已發佈 - 1997 十二月 1|
|事件||Proceedings of the 1997 12th Biennial University/Government/Industry Microelectronics - Rochester, NY, USA|
持續時間: 1997 七月 20 → 1997 七月 23
ASJC Scopus subject areas