Body effect of SiGe and CESL strained nano-node NMOSFETs on (100) silicon substrate

Mu Chun Wang, Guo Wei Wu, Shea Jue Wang, Hsin Chia Yang, Wen Shiang Liao, Ming Feng Lu, Jing Zong Jhang, Chuan Hsi Liu

研究成果: 會議貢獻類型同行評審

1 引文 斯高帕斯(Scopus)

摘要

An alternative technique to improve the electric performance of shrunk MOSFET devices is strained engineering. Considering SiGe channel layer as a global strain capping a Si layer to prevent Ge diffusion from the SiGe channel layer and soften the stress between SiON gate dielectric and SiGe channel is a possible way. To favor NMOSFET, depositing silicon nitride on gate as contact etching stop layer (CESL) process providing the tensile effect is more appreciated. In this study, besides the electrical characteristics with different strain processes, the conduction path and channel location of electron carrier through body bias adjustment is an attractive exploration. Because the charge profile in channel shown as a quantum mechanical effect is not a uniform distribution, the chief inversion layer thickness of electron carrier will be shifted when the substrate bias is applied. This evidence will be exhibited in gamma factor. Observing the gamma shift, the main conductive path of electron carrier can be diagnosed and analyzed about the quality of SiGe layer in growth.

原文英語
頁面379-382
頁數4
DOIs
出版狀態已發佈 - 2013 五月 27
事件2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, 臺灣
持續時間: 2013 二月 252013 二月 26

其他

其他2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
國家臺灣
城市Kaohsiung
期間13/2/2513/2/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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