Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire

S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen*, Y. L. Wang, Y. F. Chen, C. W. Hsu, L. C. Chen, H. M. Lin, C. C. Chen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

32 引文 斯高帕斯(Scopus)

摘要

The properties of yellow luminescence (YL) band were discussed for the case of self-ion (Ga+)-implanted GaN nanowire. The YL band in nominally doped n-GaN nanowire was shown to exhibit a blueshift with accumulation of nitrogen vacancies during the self-ion irradiation process. A blue luminescence band was observed at ∼2.8 eV for the sample primarily containing large nitrogen vacancy related point-defect clusters at the fluence of amorphization. The blueshift was attributed to transitions involving shallow donor clusters to VN clusters and probable deep acceptor linked to Ga1 clusters in the energetic irradiation process.

原文英語
頁(從 - 到)3486-3488
頁數3
期刊Applied Physics Letters
84
發行號18
DOIs
出版狀態已發佈 - 2004 五月 3

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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