Bipolar switching characteristics of low-power Geo resistive memory

C. H. Cheng, P. C. Chen, S. L. Liu, T. L. Wu, H. H. Hsu, Albert Chin, F. S. Yeh

研究成果: 雜誌貢獻文章同行評審

4 引文 斯高帕斯(Scopus)

摘要

We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeOx dielectric. This cost-effective Ni/GeOx/TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.

原文英語
頁(從 - 到)90-93
頁數4
期刊Solid-State Electronics
62
發行號1
DOIs
出版狀態已發佈 - 2011 八月 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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