Bipolar switching characteristics of low-power Geo resistive memory

C. H. Cheng; P. C. Chen; S. L. Liu; T. L. Wu; H. H. Hsu; Albert Chin; F. S. Yeh

doi:10.1016/j.sse.2011.04.010

Bipolar switching characteristics of low-power Geo resistive memory

C. H. Cheng, P. C. Chen, S. L. Liu, T. L. Wu, H. H. Hsu, Albert Chin, F. S. Yeh

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4 引文斯高帕斯（Scopus）

摘要

We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeO_x dielectric. This cost-effective Ni/GeO_x/TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.

原文	英語
頁（從 - 到）	90-93
頁數	4
期刊	Solid-State Electronics
卷	62
發行號	1
DOIs	https://doi.org/10.1016/j.sse.2011.04.010
出版狀態	已發佈 - 2011 八月 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2011.04.010

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AU - Liu, S. L.

AU - Wu, T. L.

AU - Hsu, H. H.

AU - Chin, Albert

AU - Yeh, F. S.

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