摘要
We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeOx dielectric. This cost-effective Ni/GeOx/TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.
原文 | 英語 |
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頁(從 - 到) | 90-93 |
頁數 | 4 |
期刊 | Solid-State Electronics |
卷 | 62 |
發行號 | 1 |
DOIs | |
出版狀態 | 已發佈 - 2011 八月 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry