Bipolar switching characteristics of low-power Geo resistive memory

C. H. Cheng; P. C. Chen; S. L. Liu; T. L. Wu; H. H. Hsu; Albert Chin; F. S. Yeh

doi:10.1016/j.sse.2011.04.010

Bipolar switching characteristics of low-power Geo resistive memory

C. H. Cheng, P. C. Chen, S. L. Liu, T. L. Wu, H. H. Hsu, Albert Chin, F. S. Yeh

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeO_x dielectric. This cost-effective Ni/GeO_x/TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.

原文	英語
頁（從 - 到）	90-93
頁數	4
期刊	Solid-State Electronics
卷	62
發行號	1
DOIs	https://doi.org/10.1016/j.sse.2011.04.010
出版狀態	已發佈 - 2011 八月

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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10.1016/j.sse.2011.04.010

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title = "Bipolar switching characteristics of low-power Geo resistive memory",

abstract = "We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeOx dielectric. This cost-effective Ni/GeOx/TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.",

keywords = "Germanium oxide (GeO), Resistive random access memory (RRAM)",

author = "Cheng, {C. H.} and Chen, {P. C.} and Liu, {S. L.} and Wu, {T. L.} and Hsu, {H. H.} and Albert Chin and Yeh, {F. S.}",

note = "Funding Information: This work was supported in part by National Science Council of Taiwan.",

year = "2011",

month = aug,

doi = "10.1016/j.sse.2011.04.010",

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T1 - Bipolar switching characteristics of low-power Geo resistive memory

AU - Cheng, C. H.

AU - Chen, P. C.

AU - Liu, S. L.

AU - Wu, T. L.

AU - Hsu, H. H.

AU - Chin, Albert

AU - Yeh, F. S.

N1 - Funding Information: This work was supported in part by National Science Council of Taiwan.

PY - 2011/8

Y1 - 2011/8

N2 - We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeOx dielectric. This cost-effective Ni/GeOx/TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.

AB - We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeOx dielectric. This cost-effective Ni/GeOx/TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.

KW - Germanium oxide (GeO)

KW - Resistive random access memory (RRAM)

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Bipolar switching characteristics of low-power Geo resistive memory

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