摘要
This study calculated the contribution of electrons and holes to TiO 2 conductivity in Si/TiO 2/Ni structures by conducting experiments on the injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of TiO 2, enabling two-band conductivity.
| 原文 | 英語 |
|---|---|
| 文章編號 | 032101 |
| 期刊 | Applied Physics Letters |
| 卷 | 101 |
| 發行號 | 3 |
| DOIs | |
| 出版狀態 | 已發佈 - 2012 7月 16 |
ASJC Scopus subject areas
- 物理與天文學(雜項)
指紋
深入研究「Bipolar conductivity in nanocrystallized TiO 2」主題。共同形成了獨特的指紋。引用此
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