Bipolar conductivity in amorphous HfO2

D. R. Islamov; V. A. Gritsenko; C. H. Cheng; A. Chin

doi:10.1063/1.3626599

Bipolar conductivity in amorphous HfO₂

D. R. Islamov^*
, V. A. Gritsenko
, C. H. Cheng
, A. Chin

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

21 引文斯高帕斯（Scopus）

摘要

This study calculates the contribution of electrons and holes to HfO ₂ conductivity in Si/HfO₂/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO₂, allowing HfO₂ to exhibit two-band conductivity.

原文	英語
文章編號	072109
期刊	Applied Physics Letters
卷	99
發行號	7
DOIs	https://doi.org/10.1063/1.3626599
出版狀態	已發佈 - 2011 8月 15
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.3626599

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title = "Bipolar conductivity in amorphous HfO2",

abstract = "This study calculates the contribution of electrons and holes to HfO 2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity.",

author = "Islamov, \{D. R.\} and Gritsenko, \{V. A.\} and Cheng, \{C. H.\} and A. Chin",

note = "Funding Information: The authors would like to thank S. S. Shaimeev for his assistance with running the experiment. This work was supported by project No. 150 of Siberian Branch of the Russian Academy of Sciences and the National Science Council, Taiwan, under Grant No. NSC-100-2923-E-009-001-MY3.",

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AU - Gritsenko, V. A.

AU - Cheng, C. H.

AU - Chin, A.

N1 - Funding Information: The authors would like to thank S. S. Shaimeev for his assistance with running the experiment. This work was supported by project No. 150 of Siberian Branch of the Russian Academy of Sciences and the National Science Council, Taiwan, under Grant No. NSC-100-2923-E-009-001-MY3.

PY - 2011/8/15

Y1 - 2011/8/15

N2 - This study calculates the contribution of electrons and holes to HfO 2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity.

AB - This study calculates the contribution of electrons and holes to HfO 2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity.

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ER -

Bipolar conductivity in amorphous HfO2

摘要

ASJC Scopus subject areas

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指紋

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Bipolar conductivity in amorphous HfO₂