Bipolar conductivity in amorphous HfO2

D. R. Islamov, V. A. Gritsenko, C. H. Cheng, A. Chin

研究成果: 雜誌貢獻文章

12 引文 (Scopus)

摘要

This study calculates the contribution of electrons and holes to HfO 2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity.

原文英語
文章編號072109
期刊Applied Physics Letters
99
發行號7
DOIs
出版狀態已發佈 - 2011 八月 15

指紋

conductivity
minority carriers
electrons
injection
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

引用此文

Islamov, D. R., Gritsenko, V. A., Cheng, C. H., & Chin, A. (2011). Bipolar conductivity in amorphous HfO2. Applied Physics Letters, 99(7), [072109]. https://doi.org/10.1063/1.3626599

Bipolar conductivity in amorphous HfO2. / Islamov, D. R.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.

於: Applied Physics Letters, 卷 99, 編號 7, 072109, 15.08.2011.

研究成果: 雜誌貢獻文章

Islamov, DR, Gritsenko, VA, Cheng, CH & Chin, A 2011, 'Bipolar conductivity in amorphous HfO2', Applied Physics Letters, 卷 99, 編號 7, 072109. https://doi.org/10.1063/1.3626599
Islamov, D. R. ; Gritsenko, V. A. ; Cheng, C. H. ; Chin, A. / Bipolar conductivity in amorphous HfO2. 於: Applied Physics Letters. 2011 ; 卷 99, 編號 7.
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