Bipolar conductivity in amorphous HfO2

D. R. Islamov*, V. A. Gritsenko, C. H. Cheng, A. Chin

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

15 引文 斯高帕斯(Scopus)

摘要

This study calculates the contribution of electrons and holes to HfO 2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity.

原文英語
文章編號072109
期刊Applied Physics Letters
99
發行號7
DOIs
出版狀態已發佈 - 2011 八月 15

ASJC Scopus subject areas

  • 物理與天文學(雜項)

指紋

深入研究「Bipolar conductivity in amorphous HfO<sub>2</sub>」主題。共同形成了獨特的指紋。

引用此