Bipolar Conduction in Tin-Oxide Semiconductor Channel Treated by Oxygen Plasma for Low-Power Thin-Film Transistor Application

Po Chun Chen, Yung Hsien Wu, Zhi Wei Zheng, Yu Chien Chiu, Chun Hu Cheng, Shiang Shiou Yen, Hsiao Hsuan Hsu, Chun Yen Chang

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

In this paper, we investigated the bipolar conduction mechanism in thin-film transistors (TFTs) with oxygen plasma treatment on tin-oxide channel. The optimized p-type thin-oxide TFTs showed an on/off ratio of >104 , a threshold voltage of -1.05 V, and a field-effect mobility of 2.14 cm2 · V-1 · s-1. By increasing the exposure time of oxygen plasma, excess oxygen was incorporated to thin-oxide channel and converted thin monoxide to oxygen-rich n-type thin dioxide, which in turn led to n-type operation. It indicated that oxygen plasma was the critical factor to determine oxygen concentration, oxygen vacancies, metal ions and channel polarity. This proposed oxygen-content tuning through plasma treatment approach shows great promise in simplification of TFT process that can achieve n-type and p-type TFTs under the same device process.

原文英語
文章編號7165597
頁(從 - 到)224-227
頁數4
期刊Journal of Display Technology
12
發行號3
DOIs
出版狀態已發佈 - 2016 三月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

指紋

深入研究「Bipolar Conduction in Tin-Oxide Semiconductor Channel Treated by Oxygen Plasma for Low-Power Thin-Film Transistor Application」主題。共同形成了獨特的指紋。

引用此