Bilayer-based antiferroelectric HfZrO2tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory

K. Y. Hsiang, C. Y. Liao, J. H. Liu, J. F. Wang, S. H. Chiang, S. H. Chang, F. C. Hsieh, H. Liang, C. Y. Lin, Z. F. Lou, T. H. Hou, C. W. Liu, M. H. Lee*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

19 引文 斯高帕斯(Scopus)

指紋

深入研究「Bilayer-based antiferroelectric HfZrO2tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory」主題。共同形成了獨特的指紋。

INIS

Material Science