@article{e1529cc6dc38447cb6f6784b2aa00364,
title = "Bilayer-based antiferroelectric HfZrO2tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory",
abstract = "The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO2 (HZO) and dielectric (DE) Al2O3 demonstrates a current ratio of >100×, a TER (tunneling electroresistance) of >50×, multilevel states, >104 sec retention, and a cycling endurance as high as 108. The concept of tunneling current through DE in an antiferroelectric (AFE) system enhances the capacity to modulate the current/TER ratio and makes the AFTJ feasible for low-power crossbar eNVM (embedded nonvolatile memory) applications.",
keywords = "Antiferroelectric, Ferroelectric, HfZrO",
author = "Hsiang, {K. Y.} and Liao, {C. Y.} and Liu, {J. H.} and Wang, {J. F.} and Chiang, {S. H.} and Chang, {S. H.} and Hsieh, {F. C.} and H. Liang and Lin, {C. Y.} and Lou, {Z. F.} and Hou, {T. H.} and Liu, {C. W.} and Lee, {M. H.}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.",
year = "2021",
month = oct,
doi = "10.1109/LED.2021.3107940",
language = "English",
volume = "42",
pages = "1464--1467",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",
}