Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs

M. H. Lee; Y. Y. Lin; Y. J. Yang; F. C. Hsieh; S. T. Chang; M. H. Liao; K. S. Li; C. W. Liu; K. T. Chen; C. Y. Liao; G. Y. Siang; C. Lo; H. Y. Chen; Y. J. Tseng; C. Y. Chueh; C. Chang

doi:10.1109/IEDM19573.2019.8993581

Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf_0.25Zr_0.75O₂ Negative Capacitance FETs

M. H. Lee, Y. Y. Lin, Y. J. Yang, F. C. Hsieh, S. T. Chang, M. H. Liao, K. S. Li, C. W. Liu, K. T. Chen, C. Y. Liao, G. Y. Siang, C. Lo, H. Y. Chen, Y. J. Tseng, C. Y. Chueh, C. Chang

光電工程學士學位學程

研究成果: 書貢獻/報告類型 › 會議論文篇章

12 引文斯高帕斯（Scopus）

摘要

Being the first demonstration of quasi-antiferroelertic Hf_1-xZr_xO₂ (QAFE-HZO, Zr=75%) negative-capacitance (NC) FET with non-hysteretic bi-directional sub-60mV/dec (SS_for=51mV/dec, SS_rev=53mV/dec, ΔV_T<1mV) for low onset voltage and high speed response, both forward backward (reverse) sweep exhibit obvious N-DIBL and NDR of QAFE-HZO to confirm NC effect. There is an operation window for steep SS without hysteresis for QAFE-HZO as compared with accompanying a non-negligible hysteresis FE-HZO (Zr=50%). The QAFE-HZO is also serviceable for both n-type and p-type channel FETs. The voltage transient response presents NC time 48%-77% improvement and V_FE overlap of negative dQ/dV_FE for forward and reverse, indicating non-hysteretic QAFE-HZO.

原文	英語
主出版物標題	2019 IEEE International Electron Devices Meeting, IEDM 2019
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781728140315
DOIs	https://doi.org/10.1109/IEDM19573.2019.8993581
出版狀態	已發佈 - 2019 12月
事件	65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, 美国持續時間: 2019 12月 7 → 2019 12月 11

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
卷	2019-December
ISSN（列印）	0163-1918

會議

會議	65th Annual IEEE International Electron Devices Meeting, IEDM 2019
國家/地區	美国
城市	San Francisco
期間	2019/12/07 → 2019/12/11

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
材料化學
電氣與電子工程

存取文件

10.1109/IEDM19573.2019.8993581

其它文件與鏈接

引用此

Lee, M. H., Lin, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. T., Liao, M. H., Li, K. S., Liu, C. W., Chen, K. T., Liao, C. Y., Siang, G. Y., Lo, C., Chen, H. Y., Tseng, Y. J., Chueh, C. Y., & Chang, C. (2019). Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf_0.25Zr_0.75O₂ Negative Capacitance FETs. 於 2019 IEEE International Electron Devices Meeting, IEDM 2019 文章 8993581 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993581

Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf_0.25Zr_0.75O₂ Negative Capacitance FETs. / Lee, M. H.; Lin, Y. Y.; Yang, Y. J. 等.
2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8993581 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2019-December).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Lee, MH, Lin, YY, Yang, YJ, Hsieh, FC, Chang, ST, Liao, MH, Li, KS, Liu, CW, Chen, KT, Liao, CY, Siang, GY, Lo, C, Chen, HY, Tseng, YJ, Chueh, CY & Chang, C 2019, Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf_0.25Zr_0.75O₂ Negative Capacitance FETs. 於 2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993581, Technical Digest - International Electron Devices Meeting, IEDM, 卷 2019-December, Institute of Electrical and Electronics Engineers Inc., 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, 美国, 2019/12/07. https://doi.org/10.1109/IEDM19573.2019.8993581

Lee MH, Lin YY, Yang YJ, Hsieh FC, Chang ST, Liao MH 等. Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf_0.25Zr_0.75O₂ Negative Capacitance FETs. 於 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8993581. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM19573.2019.8993581

Lee, M. H. ; Lin, Y. Y. ; Yang, Y. J. 等. / Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf_0.25Zr_0.75O₂ Negative Capacitance FETs. 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{a7a7d355bede47b892c802987847c85e,

title = "Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs",

abstract = "Being the first demonstration of quasi-antiferroelertic Hf1-xZrxO2 (QAFE-HZO, Zr=75%) negative-capacitance (NC) FET with non-hysteretic bi-directional sub-60mV/dec (SSfor=51mV/dec, SSrev=53mV/dec, ΔVT<1mV) for low onset voltage and high speed response, both forward backward (reverse) sweep exhibit obvious N-DIBL and NDR of QAFE-HZO to confirm NC effect. There is an operation window for steep SS without hysteresis for QAFE-HZO as compared with accompanying a non-negligible hysteresis FE-HZO (Zr=50%). The QAFE-HZO is also serviceable for both n-type and p-type channel FETs. The voltage transient response presents NC time 48%-77% improvement and VFE overlap of negative dQ/dVFE for forward and reverse, indicating non-hysteretic QAFE-HZO.",

author = "Lee, {M. H.} and Lin, {Y. Y.} and Yang, {Y. J.} and Hsieh, {F. C.} and Chang, {S. T.} and Liao, {M. H.} and Li, {K. S.} and Liu, {C. W.} and Chen, {K. T.} and Liao, {C. Y.} and Siang, {G. Y.} and C. Lo and Chen, {H. Y.} and Tseng, {Y. J.} and Chueh, {C. Y.} and C. Chang",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",

year = "2019",

month = dec,

doi = "10.1109/IEDM19573.2019.8993581",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE International Electron Devices Meeting, IEDM 2019",

}

TY - GEN

T1 - Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs

AU - Lee, M. H.

AU - Lin, Y. Y.

AU - Yang, Y. J.

AU - Hsieh, F. C.

AU - Chang, S. T.

AU - Liao, M. H.

AU - Li, K. S.

AU - Liu, C. W.

AU - Chen, K. T.

AU - Liao, C. Y.

AU - Siang, G. Y.

AU - Lo, C.

AU - Chen, H. Y.

AU - Tseng, Y. J.

AU - Chueh, C. Y.

AU - Chang, C.

PY - 2019/12

Y1 - 2019/12

N2 - Being the first demonstration of quasi-antiferroelertic Hf1-xZrxO2 (QAFE-HZO, Zr=75%) negative-capacitance (NC) FET with non-hysteretic bi-directional sub-60mV/dec (SSfor=51mV/dec, SSrev=53mV/dec, ΔVT<1mV) for low onset voltage and high speed response, both forward backward (reverse) sweep exhibit obvious N-DIBL and NDR of QAFE-HZO to confirm NC effect. There is an operation window for steep SS without hysteresis for QAFE-HZO as compared with accompanying a non-negligible hysteresis FE-HZO (Zr=50%). The QAFE-HZO is also serviceable for both n-type and p-type channel FETs. The voltage transient response presents NC time 48%-77% improvement and VFE overlap of negative dQ/dVFE for forward and reverse, indicating non-hysteretic QAFE-HZO.

AB - Being the first demonstration of quasi-antiferroelertic Hf1-xZrxO2 (QAFE-HZO, Zr=75%) negative-capacitance (NC) FET with non-hysteretic bi-directional sub-60mV/dec (SSfor=51mV/dec, SSrev=53mV/dec, ΔVT<1mV) for low onset voltage and high speed response, both forward backward (reverse) sweep exhibit obvious N-DIBL and NDR of QAFE-HZO to confirm NC effect. There is an operation window for steep SS without hysteresis for QAFE-HZO as compared with accompanying a non-negligible hysteresis FE-HZO (Zr=50%). The QAFE-HZO is also serviceable for both n-type and p-type channel FETs. The voltage transient response presents NC time 48%-77% improvement and VFE overlap of negative dQ/dVFE for forward and reverse, indicating non-hysteretic QAFE-HZO.

UR - http://www.scopus.com/inward/record.url?scp=85081048172&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85081048172&partnerID=8YFLogxK

U2 - 10.1109/IEDM19573.2019.8993581

DO - 10.1109/IEDM19573.2019.8993581

M3 - Conference contribution

AN - SCOPUS:85081048172

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2019 IEEE International Electron Devices Meeting, IEDM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 65th Annual IEEE International Electron Devices Meeting, IEDM 2019

Y2 - 7 December 2019 through 11 December 2019

ER -