Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs

M. H. Lee, Y. Y. Lin, Y. J. Yang, F. C. Hsieh, S. T. Chang, M. H. Liao, K. S. Li, C. W. Liu, K. T. Chen, C. Y. Liao, G. Y. Siang, C. Lo, H. Y. Chen, Y. J. Tseng, C. Y. Chueh, C. Chang

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)

摘要

Being the first demonstration of quasi-antiferroelertic Hf1-xZrxO2 (QAFE-HZO, Zr=75%) negative-capacitance (NC) FET with non-hysteretic bi-directional sub-60mV/dec (SSfor=51mV/dec, SSrev=53mV/dec, ΔVT<1mV) for low onset voltage and high speed response, both forward backward (reverse) sweep exhibit obvious N-DIBL and NDR of QAFE-HZO to confirm NC effect. There is an operation window for steep SS without hysteresis for QAFE-HZO as compared with accompanying a non-negligible hysteresis FE-HZO (Zr=50%). The QAFE-HZO is also serviceable for both n-type and p-type channel FETs. The voltage transient response presents NC time 48%-77% improvement and VFE overlap of negative dQ/dVFE for forward and reverse, indicating non-hysteretic QAFE-HZO.

原文英語
主出版物標題2019 IEEE International Electron Devices Meeting, IEDM 2019
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728140315
DOIs
出版狀態已發佈 - 2019 十二月
事件65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, 美国
持續時間: 2019 十二月 72019 十二月 11

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2019-December
ISSN(列印)0163-1918

會議

會議65th Annual IEEE International Electron Devices Meeting, IEDM 2019
國家/地區美国
城市San Francisco
期間2019/12/072019/12/11

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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