Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory

Meng Yi Wu*, Sheng Huei Dai, Kung Hong Lee, Shu-Fen Hu, Ya Chin King

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

A new proposed flash memory with divided p-substrate-line (PBL) in modified NOR-type array is described. The programming method of band-to-band tunneling induced substrate hot electron injection (BBISHE) provides high programming efficiency. Realized in NOR-type array and combining with the channel FN ejection erasure, the cell guarantees fast random access capability. The BBISHE programming flash memory features high programming efficiency, low voltage operation, high-speed and reliability up to 104 P/E cycles.

原文英語
頁(從 - 到)309-315
頁數7
期刊Solid-State Electronics
50
發行號3
DOIs
出版狀態已發佈 - 2006 三月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

指紋

深入研究「Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory」主題。共同形成了獨特的指紋。

引用此