Band gap reduction in InAsN alloys

Ding Kang Shih, Hao Hsiung Lin*, Li Wei Sung, Tso Yu Chu, T. R. Yang


研究成果: 雜誌貢獻期刊論文同行評審

67 引文 斯高帕斯(Scopus)


We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates using plasma-assisted gas-source molecular beam epitaxy. From absorption measurements, it is found that the fundamental absorption energy of InAsN is higher than that of InAs due to the Burstein-Moss effect resulting from the high residual carrier concentration in InAsN. To deduce the 'real' band-gap energy of InAsN samples, the energy shift due to the Burstein-Moss effect and the band-gap narrowing effect are calculated by using a self-consistent approach based on the band-anticrossing (BAC) model [Shan et al.: Phys. Rev. Lett. 82 (1999) 1221]. After correction, the 'real' band-gap energy of InAsN samples decreases as N increases. The electron effective mass of InAsN is also investigated by plasma-edge measurement. We found a sizeable increase of the electron effective mass in these InAsN alloys, which is consistent with the theoretical predictions based on the BAC model.

頁(從 - 到)375-383
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
發行號2 A
出版狀態已發佈 - 2003 2月

ASJC Scopus subject areas

  • 工程 (全部)
  • 物理與天文學 (全部)


深入研究「Band gap reduction in InAsN alloys」主題。共同形成了獨特的指紋。