摘要
We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates using plasma-assisted gas-source molecular beam epitaxy. From absorption measurements, it is found that the fundamental absorption energy of InAsN is higher than that of InAs due to the Burstein-Moss effect resulting from the high residual carrier concentration in InAsN. To deduce the 'real' band-gap energy of InAsN samples, the energy shift due to the Burstein-Moss effect and the band-gap narrowing effect are calculated by using a self-consistent approach based on the band-anticrossing (BAC) model [Shan et al.: Phys. Rev. Lett. 82 (1999) 1221]. After correction, the 'real' band-gap energy of InAsN samples decreases as N increases. The electron effective mass of InAsN is also investigated by plasma-edge measurement. We found a sizeable increase of the electron effective mass in these InAsN alloys, which is consistent with the theoretical predictions based on the BAC model.
原文 | 英語 |
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頁(從 - 到) | 375-383 |
頁數 | 9 |
期刊 | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
卷 | 42 |
發行號 | 2 A |
DOIs | |
出版狀態 | 已發佈 - 2003 2月 |
ASJC Scopus subject areas
- 一般工程
- 一般物理與天文學