Atomic view of the upward movement of step-edge and in-layer atoms of ir surfaces

Tsu Yi Fu, Yi Ren Tzeng, Tien T. Tsong

研究成果: 雜誌貢獻期刊論文同行評審

37 引文 斯高帕斯(Scopus)

摘要

The behavior of adatoms, step-edge atoms, and in-layer atoms at high temperature plays an important role in determining the growth mode of epitaxial thin films and crystals, the crystal shape change, and the morphology of crystal surfaces. From a direct field ion microscope observation, we find that around 500 K an edge atom of the Ir(111) step can ascend the step to the upper terrace as well as dissociate to the lower terrace. The activation barrier height for the ascending motion is measured to be 1.51+/−0.10 eV, whereas the dissociation barrier is ∼1.6+/−0.2eV. Surprisingly, we also find that in-layer atoms can jump up to terrace sites, thus forming adatom-vacancy complexes, at unexpectedly low temperatures.

原文英語
頁(從 - 到)2539-2542
頁數4
期刊Physical Review Letters
76
發行號14
DOIs
出版狀態已發佈 - 1996

ASJC Scopus subject areas

  • 物理與天文學 (全部)

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