Atomic view of the upward movement of step-edge and in-layer atoms of ir surfaces

Tsu Yi Fu, Yi Ren Tzeng, Tien T. Tsong

    研究成果: 雜誌貢獻文章同行評審

    36 引文 斯高帕斯(Scopus)

    摘要

    The behavior of adatoms, step-edge atoms, and in-layer atoms at high temperature plays an important role in determining the growth mode of epitaxial thin films and crystals, the crystal shape change, and the morphology of crystal surfaces. From a direct field ion microscope observation, we find that around 500 K an edge atom of the Ir(111) step can ascend the step to the upper terrace as well as dissociate to the lower terrace. The activation barrier height for the ascending motion is measured to be 1.51+/−0.10 eV, whereas the dissociation barrier is ∼1.6+/−0.2eV. Surprisingly, we also find that in-layer atoms can jump up to terrace sites, thus forming adatom-vacancy complexes, at unexpectedly low temperatures.

    原文英語
    頁(從 - 到)2539-2542
    頁數4
    期刊Physical Review Letters
    76
    發行號14
    DOIs
    出版狀態已發佈 - 1996 一月 1

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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