Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy

Y. P. Chiu; B. C. Huang; M. C. Shih; J. Y. Shen; P. Chang; C. S. Chang; M. L. Huang; M. H. Tsai; M. Hong; J. Kwo

doi:10.1063/1.3663628

Atomic-scale determination of band offsets at the Gd₂O ₃/GaAs (100) hetero-interface using scanning tunneling spectroscopy

Y. P. Chiu^*
, B. C. Huang
, M. C. Shih
, J. Y. Shen
, P. Chang
, C. S. Chang
, M. L. Huang
, M. H. Tsai
, M. Hong
, J. Kwo

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

10 引文斯高帕斯（Scopus）

摘要

Direct measurements of band profile and band offsets across the Gd ₂O₃/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the local density of states with atomic precision revealed the interfacial band alignment in this model high-/III-V system. In conjunction with the theoretical modeling, the band offsets for both conduction and valence states are identified, revealing critical information about the electrostatic potential landscape of the GaAs semiconductor transistor with a Gd ₂O₃ gate dielectric.

原文	英語
文章編號	212101
期刊	Applied Physics Letters
卷	99
發行號	21
DOIs	https://doi.org/10.1063/1.3663628
出版狀態	已發佈 - 2011 11月 21
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.3663628

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引用此

@article{c4959b12391d4cf7a6f38b6ccc1a2640,

title = "Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy",

abstract = "Direct measurements of band profile and band offsets across the Gd 2O3/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the local density of states with atomic precision revealed the interfacial band alignment in this model high-/III-V system. In conjunction with the theoretical modeling, the band offsets for both conduction and valence states are identified, revealing critical information about the electrostatic potential landscape of the GaAs semiconductor transistor with a Gd 2O3 gate dielectric.",

author = "Chiu, \{Y. P.\} and Huang, \{B. C.\} and Shih, \{M. C.\} and Shen, \{J. Y.\} and P. Chang and Chang, \{C. S.\} and Huang, \{M. L.\} and Tsai, \{M. H.\} and M. Hong and J. Kwo",

note = "Funding Information: The authors wish to thank National Science Council, Taiwan, under grants of NSC 98-2112 -M-110-005-MY3, 98-2120 -M-007-002, and 96-2628 -M-007-003-MY3, Intel, the Asian Office of Aerospace Research, and Development of the U.S. Air Force for supporting this work. The authors thank Dr. Woei Wu Pai for his valuable comments. We also thank Professor Li-Wei Tu, T. H. Chen, W. C. Lee, T. H. Chiang, and P. C. Huang for their technical supports. ",

year = "2011",

month = nov,

day = "21",

doi = "10.1063/1.3663628",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "21",

}

TY - JOUR

T1 - Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy

AU - Chiu, Y. P.

AU - Huang, B. C.

AU - Shih, M. C.

AU - Shen, J. Y.

AU - Chang, P.

AU - Chang, C. S.

AU - Huang, M. L.

AU - Tsai, M. H.

AU - Hong, M.

AU - Kwo, J.

N1 - Funding Information: The authors wish to thank National Science Council, Taiwan, under grants of NSC 98-2112 -M-110-005-MY3, 98-2120 -M-007-002, and 96-2628 -M-007-003-MY3, Intel, the Asian Office of Aerospace Research, and Development of the U.S. Air Force for supporting this work. The authors thank Dr. Woei Wu Pai for his valuable comments. We also thank Professor Li-Wei Tu, T. H. Chen, W. C. Lee, T. H. Chiang, and P. C. Huang for their technical supports.

PY - 2011/11/21

Y1 - 2011/11/21

N2 - Direct measurements of band profile and band offsets across the Gd 2O3/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the local density of states with atomic precision revealed the interfacial band alignment in this model high-/III-V system. In conjunction with the theoretical modeling, the band offsets for both conduction and valence states are identified, revealing critical information about the electrostatic potential landscape of the GaAs semiconductor transistor with a Gd 2O3 gate dielectric.

AB - Direct measurements of band profile and band offsets across the Gd 2O3/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the local density of states with atomic precision revealed the interfacial band alignment in this model high-/III-V system. In conjunction with the theoretical modeling, the band offsets for both conduction and valence states are identified, revealing critical information about the electrostatic potential landscape of the GaAs semiconductor transistor with a Gd 2O3 gate dielectric.

UR - https://www.scopus.com/pages/publications/81855228018

UR - https://www.scopus.com/pages/publications/81855228018#tab=citedBy

U2 - 10.1063/1.3663628

DO - 10.1063/1.3663628

M3 - Article

AN - SCOPUS:81855228018

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212101

ER -

Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy

摘要

ASJC Scopus subject areas

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其它文件與鏈接

指紋

引用此

Atomic-scale determination of band offsets at the Gd₂O ₃/GaAs (100) hetero-interface using scanning tunneling spectroscopy