Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy

Y. P. Chiu*, B. C. Huang, M. C. Shih, J. Y. Shen, P. Chang, C. S. Chang, M. L. Huang, M. H. Tsai, M. Hong, J. Kwo

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

10 引文 斯高帕斯(Scopus)

摘要

Direct measurements of band profile and band offsets across the Gd 2O3/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the local density of states with atomic precision revealed the interfacial band alignment in this model high-/III-V system. In conjunction with the theoretical modeling, the band offsets for both conduction and valence states are identified, revealing critical information about the electrostatic potential landscape of the GaAs semiconductor transistor with a Gd 2O3 gate dielectric.

原文英語
文章編號212101
期刊Applied Physics Letters
99
發行號21
DOIs
出版狀態已發佈 - 2011 11月 21
對外發佈

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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