Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

Che Yu Lin, Xiaodan Zhu, Shin Hung Tsai, Shiao Po Tsai, Sidong Lei, Yumeng Shi, Lain Jong Li, Shyh Jer Huang, Wen Fa Wu, Wen Kuan Yeh, Yan Kuin Su, Kang L. Wang, Yann Wen Lan

研究成果: 雜誌貢獻文章

11 引文 斯高帕斯(Scopus)

摘要

High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics.

原文英語
頁(從 - 到)11015-11023
頁數9
期刊ACS Nano
11
發行號11
DOIs
出版狀態已發佈 - 2017 十一月 28

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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    Lin, C. Y., Zhu, X., Tsai, S. H., Tsai, S. P., Lei, S., Shi, Y., Li, L. J., Huang, S. J., Wu, W. F., Yeh, W. K., Su, Y. K., Wang, K. L., & Lan, Y. W. (2017). Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon. ACS Nano, 11(11), 11015-11023. https://doi.org/10.1021/acsnano.7b05012