Atomic Layer Deposition Plasma-Based Undoped-HfO2Ferroelectric FETs for Non-Volatile Memory

Jun Dao Luo, Yu Ying Lai, Kuo Yu Hsiang, Chia Feng Wu, Hao Tung Chung, Wei Shuo Li, Chun Yu Liao, Pin Guang Chen, Kuan Neng Chen, Min Hung Lee*, Huang Chung Cheng

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

A plasma-based undoped-HfO2 FeFET (ferroelectric FET) with non-volatile memory characteristics is demonstrated. Modifying the O2 plasma period in plasma-enhanced atomic layer deposition (PE-ALD) is an effective approach to enhance the remnant polarization ( \text{P} {\text {r}} ) up to 2P {\text {r}} = 25\,\,\mu \text{C} /cm2 for the MFM (metal/ferroelectric/metal) structure with ferroelectric undoped-HfO2 thin films, and successful integration is implemented for the FeFET. The appropriate O2 vacancies ( \text{V} {\text {o} {{2}+} ) benefit the formation of the ferroelectric phase since they play the role of dopants and help orthorhombic phase (o-phase) formation during post-metal annealing (PMA). The \text{V} {\text {o}} {{2}+} -rich undoped-HfO2 FeFET exhibits a memory window (MW) of 0.5 V, {5} \times {10} {{4}} switching endurance cycles, and higher than 10 {{4}} sec of data retention with \text{V} {\text {P/E}} = \pm 5 V.

原文英語
文章編號9465799
頁(從 - 到)1152-1155
頁數4
期刊IEEE Electron Device Letters
42
發行號8
DOIs
出版狀態已發佈 - 2021 八月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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