TY - JOUR
T1 - As grown Bi2Sr2CaCu2Oy films by an off axis RF magnetron
AU - Lu, J. H.
AU - Yang, H. C.
AU - Horng, H. E.
N1 - Funding Information:
*This work is supportedby National Science Council under contact No. NSC81-0212-M-O03-516.
PY - 1994/2/2
Y1 - 1994/2/2
N2 - Bi2Sr2Cu2Oy (BSCCO) films were in intu grown by an off axis rf magnetron sputtering. The sputtering targets were stoichiometric Bi2Sr2CaCu2O8 compounds. The sputtering gas was a maximum of O2 and Ar and the sputtering pressure varied from 50 - 100 mTorr. The films were grown at 570 - 600 °C. After growth the films were quickly cooled down to 300 K in 30 minutes. One found that the distance from the substrate to the target d is an important factor in affecting the deposition rate of the as grown BSCCO films. By reducing the distance d to 3 cm, we have achieved a deposition rate of about 1500 Å per hour in a sputtering power of 60 watts and sputtering pressure of 70 mtorr. With optinum growth conditions where the sustrate temperature was kept at 580 - 600 °C and the pressure was kept at 70 - 80 mTorr, superconducting BSCCO films with zero resistan at 75 - 85 K can be reproduced.
AB - Bi2Sr2Cu2Oy (BSCCO) films were in intu grown by an off axis rf magnetron sputtering. The sputtering targets were stoichiometric Bi2Sr2CaCu2O8 compounds. The sputtering gas was a maximum of O2 and Ar and the sputtering pressure varied from 50 - 100 mTorr. The films were grown at 570 - 600 °C. After growth the films were quickly cooled down to 300 K in 30 minutes. One found that the distance from the substrate to the target d is an important factor in affecting the deposition rate of the as grown BSCCO films. By reducing the distance d to 3 cm, we have achieved a deposition rate of about 1500 Å per hour in a sputtering power of 60 watts and sputtering pressure of 70 mtorr. With optinum growth conditions where the sustrate temperature was kept at 580 - 600 °C and the pressure was kept at 70 - 80 mTorr, superconducting BSCCO films with zero resistan at 75 - 85 K can be reproduced.
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U2 - 10.1016/0921-4526(94)91667-5
DO - 10.1016/0921-4526(94)91667-5
M3 - Article
AN - SCOPUS:0028760130
VL - 194-196
SP - 2335
EP - 2336
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - PART 2
ER -