@article{cdc1f95acb9847eba882898b2b156fbb,
title = "Area-efficient and low-leakage diode string for On-Chip ESD protection",
abstract = "Diode string was used as the effective on-chip electrostatic discharge (ESD) protection device. To reduce the leakage current and the layout area, an area-efficient and lowleakage diode string is proposed in this paper. The standard steps of P- implantation and silicide blocking in CMOS process are used in this design to realize the proposed diode string with stacked P-/N+ diodes. The test devices of the proposed design have successfully been verified in the silicon chip. With the high ESD robustness, low leakage current, and small layout area, the proposed diode string can be a better solution for on-chip ESD protection applications.",
keywords = "Diode, Diode string, Electrostatic discharge (ESD), Leakage",
author = "Lin, {Chun Yu} and Wu, {Po Han} and Ker, {Ming Dou}",
note = "Funding Information: This work was supported in part by the National Chip Implementation Center, Taiwan, for Chip Fabrication, in part by Global Unichip Corporation, Taiwan, in part by the Biomedical Electronics Translational Research Center, National Chiao Tung University, Hsinchu, Taiwan, and in part by the Ministry of Science and Technology, Taiwan, under Contract MOST 104-2220-E-003-001 and Contract MOST 103-2221-E-009-197-MY2. The review of this paper was arranged by Editor E. Rosenbaum. Publisher Copyright: {\textcopyright} 2015 IEEE.",
year = "2016",
month = feb,
day = "1",
doi = "10.1109/TED.2015.2504493",
language = "English",
volume = "63",
pages = "531--536",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}