Antiferroelectric-Based Memcapacitor and Strategy for Non-Destructive Read Operation by Endurance Recovery

The proposed antiferroelectric capacitive memory (AFE-FCM) achieves a symmetric capacitive memory window (CMW) of ∼ 6× ϵ₀ with non-destructive readout (NDR) at 0V. The asymmetric capacitance loop (ACL) operation achieves CMW with reduced drive voltage range -1.5V to + 3V or -3V to + 1.5V. The sensing circuit of FCM verifies a significant improvement in sensing voltage for AFE compared to FE. The read endurance with NDR remains beyond 10⁹ cycling. The NDR characteristic gradually transitions to destructive readout (DR) due to the program/erase endurance, which accumulates the imprint effect. The strategy will be proposed to eliminate DR and prolong endurance through a recovery scheme, with a 100-period demonstration. The proposed AFE-FCM boasts promising metrics, including high CMW, NDR, long endurance, a crossbar architecture, a simple structure, and treatment-free capabilities.