摘要
Orthorhombic HoMn O3 films with well-aligned crystallographic orientations were deposited on LaAl O3 (110) single crystal substrates by using pulsed laser deposition. The nearly perfect b -axis-oriented films provide the opportunity of investigating the orientation-dependent physical property of this material. The temperature dependent magnetization evidently displays an antiferromagnetic ordering near 42 K, irrespective to the direction of applied field. Furthermore, the theoretically expected lock-in transition was clearly observed at around 30 K when field was applied along the c axis and was undetectable along the a and b axes. The 30 K transition was suppressed to 26 K when the applied field increased from 100 to 500 Oe.
原文 | 英語 |
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文章編號 | 132503 |
期刊 | Applied Physics Letters |
卷 | 92 |
發行號 | 13 |
DOIs | |
出版狀態 | 已發佈 - 2008 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 物理與天文學(雜項)