摘要
We present a comprehensive Raman scattering study of monolayer MoS2 with increasing laser excitation energies ranging from the near-infrared to the deep-ultraviolet. The Raman scattering intensities from the second-order phonon modes are revealed to be enhanced anomalously by only the ultraviolet excitation wavelength 354 nm. We demonstrate theoretically that such resonant behavior arises from a strong optical absorption that forms near the Γ point and of the band structure and an inter-valley resonant electronic scattering by the M-point phonons. These results advance our understanding of the double resonance Raman scattering process in low-dimensional semiconducting nanomaterials and provide a foundation for the technological development of monolayer MoS2 in the ultraviolet frequency range.
原文 | 英語 |
---|---|
頁(從 - 到) | 14561-14568 |
頁數 | 8 |
期刊 | Physical Chemistry Chemical Physics |
卷 | 17 |
發行號 | 22 |
DOIs | |
出版狀態 | 已發佈 - 2015 6月 14 |
ASJC Scopus subject areas
- 物理與天文學 (全部)
- 物理與理論化學