TY - JOUR
T1 - Anomalous hall effect in Gd-implanted wurtzite AlxGa t-xN/GaN high electron mobility transistor structures
AU - Lo, Fang Yuh
AU - Melnikov, Alexander
AU - Reuter, Dirk
AU - Cordier, Yvon
AU - Wieck, Andreas D.
PY - 2009
Y1 - 2009
N2 - AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures grown by ammonia-source molecular beam epitaxy (MBE) are focused-ion-beam implanted with 300 keV Gd-ions at room temperature. The two-dimensional electron gas (2DEG) of these HEMT structures is located 27 nm underneath the sample surface. At 4.2 K, current-voltage characteristics across implanted rectangles show that the structures remain conducting up to a Gd-dose of 1×1012 cm-2. Anomalous Hall effect (AHE) is observed at T = 4.2 K for structures implanted with Gd, whose dose is 3×1011 cm-2. Measurements of AHE in the wide temperature range from 2.4 K to 300 K show that the magnetic ordering temperature of these structures is around 100 K. Therefore, these Gd-implanted HEMT structures containing the still conducting 2DEG. which is now embedded in a ferromagnetic semiconductor, open the possibility to polarize the electron spins.
AB - AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures grown by ammonia-source molecular beam epitaxy (MBE) are focused-ion-beam implanted with 300 keV Gd-ions at room temperature. The two-dimensional electron gas (2DEG) of these HEMT structures is located 27 nm underneath the sample surface. At 4.2 K, current-voltage characteristics across implanted rectangles show that the structures remain conducting up to a Gd-dose of 1×1012 cm-2. Anomalous Hall effect (AHE) is observed at T = 4.2 K for structures implanted with Gd, whose dose is 3×1011 cm-2. Measurements of AHE in the wide temperature range from 2.4 K to 300 K show that the magnetic ordering temperature of these structures is around 100 K. Therefore, these Gd-implanted HEMT structures containing the still conducting 2DEG. which is now embedded in a ferromagnetic semiconductor, open the possibility to polarize the electron spins.
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M3 - Conference article
AN - SCOPUS:70450180488
SN - 0272-9172
VL - 1111
SP - 61
EP - 69
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
T2 - 2008 MRS Fall Meeting
Y2 - 1 December 2008 through 4 December 2008
ER -