Annealing effect on the microstructure and optical characterization of Zn2SiO4 thin film sputtered on quartz glass

Kun Cheng Peng, Hao Che Kao, Shiu-Jen Liu, Kuei Lan Tsai, Jing Chie Lin

研究成果: 雜誌貢獻文章

3 引文 (Scopus)

摘要

A thin ZnO film (approximately 500nm in thickness) was deposited on quartz glass by sputtering a ZnO target (purity of 99.995%) using a radio frequency (RF) power source in the magnetron sputter. Annealing of the specimen at elevated temperatures (i.e., 1000, 1100, and 1200 °C) was conducted to clarify the effects of annealing on the microstructure and optical characteristics of the film. It was found that silicon ions diffused faster than zinc and oxygen ions in the system containing the oxide film and quartz glass substrate Zn2SiO4 whose thickness depended on the annealing temperature and duration. The surface and cross-sectional morphologies of the as-sputtered film and films annealed at various temperatures were examined by field emission scanning electron microscopy (FE-SEM) and in more detail by high-resolution transmission electron microscopy (HRTEM). Line scans obtained by scanning transmission electron microscopy (STEM) showed that the composition (wt %) of the film annealed at 1200 °C was Zn (70%), Si (20%), and O (10%). These findings indicated that ZnO completely transferred into the Zn2SiO4 film to act as a luminescence center in the case of postannealing at 1200 °C for 2 h. The amounts of ZnO transferred to Zn2SiO4 were 38.5% at 1000 °C and 31.1% at 1100 °C for the same duration. The specimens annealed at 1000, 1100, and 1200 °C showed no photoluminescence (PL) emission as determined by measurement.

原文英語
文章編號11NB04
期刊Japanese Journal of Applied Physics
52
發行號11 PART 2
DOIs
出版狀態已發佈 - 2013 十一月 1

指紋

Quartz
quartz
Annealing
Glass
Thin films
microstructure
Microstructure
annealing
glass
thin films
transmission electron microscopy
Scanning electron microscopy
scanning electron microscopy
Ions
High resolution transmission electron microscopy
oxygen ions
Field emission
Temperature
Oxide films
Sputtering

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

引用此文

Annealing effect on the microstructure and optical characterization of Zn2SiO4 thin film sputtered on quartz glass. / Peng, Kun Cheng; Kao, Hao Che; Liu, Shiu-Jen; Tsai, Kuei Lan; Lin, Jing Chie.

於: Japanese Journal of Applied Physics, 卷 52, 編號 11 PART 2, 11NB04, 01.11.2013.

研究成果: 雜誌貢獻文章

@article{c81b2c23c201459db9a65a9751116e6c,
title = "Annealing effect on the microstructure and optical characterization of Zn2SiO4 thin film sputtered on quartz glass",
abstract = "A thin ZnO film (approximately 500nm in thickness) was deposited on quartz glass by sputtering a ZnO target (purity of 99.995{\%}) using a radio frequency (RF) power source in the magnetron sputter. Annealing of the specimen at elevated temperatures (i.e., 1000, 1100, and 1200 °C) was conducted to clarify the effects of annealing on the microstructure and optical characteristics of the film. It was found that silicon ions diffused faster than zinc and oxygen ions in the system containing the oxide film and quartz glass substrate Zn2SiO4 whose thickness depended on the annealing temperature and duration. The surface and cross-sectional morphologies of the as-sputtered film and films annealed at various temperatures were examined by field emission scanning electron microscopy (FE-SEM) and in more detail by high-resolution transmission electron microscopy (HRTEM). Line scans obtained by scanning transmission electron microscopy (STEM) showed that the composition (wt {\%}) of the film annealed at 1200 °C was Zn (70{\%}), Si (20{\%}), and O (10{\%}). These findings indicated that ZnO completely transferred into the Zn2SiO4 film to act as a luminescence center in the case of postannealing at 1200 °C for 2 h. The amounts of ZnO transferred to Zn2SiO4 were 38.5{\%} at 1000 °C and 31.1{\%} at 1100 °C for the same duration. The specimens annealed at 1000, 1100, and 1200 °C showed no photoluminescence (PL) emission as determined by measurement.",
author = "Peng, {Kun Cheng} and Kao, {Hao Che} and Shiu-Jen Liu and Tsai, {Kuei Lan} and Lin, {Jing Chie}",
year = "2013",
month = "11",
day = "1",
doi = "10.7567/JJAP.52.11NB04",
language = "English",
volume = "52",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "11 PART 2",

}

TY - JOUR

T1 - Annealing effect on the microstructure and optical characterization of Zn2SiO4 thin film sputtered on quartz glass

AU - Peng, Kun Cheng

AU - Kao, Hao Che

AU - Liu, Shiu-Jen

AU - Tsai, Kuei Lan

AU - Lin, Jing Chie

PY - 2013/11/1

Y1 - 2013/11/1

N2 - A thin ZnO film (approximately 500nm in thickness) was deposited on quartz glass by sputtering a ZnO target (purity of 99.995%) using a radio frequency (RF) power source in the magnetron sputter. Annealing of the specimen at elevated temperatures (i.e., 1000, 1100, and 1200 °C) was conducted to clarify the effects of annealing on the microstructure and optical characteristics of the film. It was found that silicon ions diffused faster than zinc and oxygen ions in the system containing the oxide film and quartz glass substrate Zn2SiO4 whose thickness depended on the annealing temperature and duration. The surface and cross-sectional morphologies of the as-sputtered film and films annealed at various temperatures were examined by field emission scanning electron microscopy (FE-SEM) and in more detail by high-resolution transmission electron microscopy (HRTEM). Line scans obtained by scanning transmission electron microscopy (STEM) showed that the composition (wt %) of the film annealed at 1200 °C was Zn (70%), Si (20%), and O (10%). These findings indicated that ZnO completely transferred into the Zn2SiO4 film to act as a luminescence center in the case of postannealing at 1200 °C for 2 h. The amounts of ZnO transferred to Zn2SiO4 were 38.5% at 1000 °C and 31.1% at 1100 °C for the same duration. The specimens annealed at 1000, 1100, and 1200 °C showed no photoluminescence (PL) emission as determined by measurement.

AB - A thin ZnO film (approximately 500nm in thickness) was deposited on quartz glass by sputtering a ZnO target (purity of 99.995%) using a radio frequency (RF) power source in the magnetron sputter. Annealing of the specimen at elevated temperatures (i.e., 1000, 1100, and 1200 °C) was conducted to clarify the effects of annealing on the microstructure and optical characteristics of the film. It was found that silicon ions diffused faster than zinc and oxygen ions in the system containing the oxide film and quartz glass substrate Zn2SiO4 whose thickness depended on the annealing temperature and duration. The surface and cross-sectional morphologies of the as-sputtered film and films annealed at various temperatures were examined by field emission scanning electron microscopy (FE-SEM) and in more detail by high-resolution transmission electron microscopy (HRTEM). Line scans obtained by scanning transmission electron microscopy (STEM) showed that the composition (wt %) of the film annealed at 1200 °C was Zn (70%), Si (20%), and O (10%). These findings indicated that ZnO completely transferred into the Zn2SiO4 film to act as a luminescence center in the case of postannealing at 1200 °C for 2 h. The amounts of ZnO transferred to Zn2SiO4 were 38.5% at 1000 °C and 31.1% at 1100 °C for the same duration. The specimens annealed at 1000, 1100, and 1200 °C showed no photoluminescence (PL) emission as determined by measurement.

UR - http://www.scopus.com/inward/record.url?scp=84889070420&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84889070420&partnerID=8YFLogxK

U2 - 10.7567/JJAP.52.11NB04

DO - 10.7567/JJAP.52.11NB04

M3 - Article

AN - SCOPUS:84889070420

VL - 52

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 11 PART 2

M1 - 11NB04

ER -