Anisotropic impurity scattering effects on (formula presented) and (formula presented) in (formula presented)

J. Y. Lin, S. J. Chen, S. Y. Chen, C. F. Chang, H. D. Yang, S. K. Tolpygo, M. Gurvitch, Y. Y. Hsu, H. C. Ku

研究成果: 雜誌貢獻文章

20 引文 斯高帕斯(Scopus)

摘要

We have studied the impurity effects on the superconducting transition temperature (Formula presented) and the upper critical field (Formula presented) in electron irradiated (Formula presented) with in-plane oxygen defects and (Formula presented) It is found that the effects of the same type of defects or impurities on (Formula presented) are the same regardless of the oxygen contents of the samples. Furthermore, (Formula presented) decreases slower in irradiated (Formula presented) than in (Formula presented) This may be well explained by the model that the scattering due to in-plane oxygen defects is more anisotropic than that due to Zn impurities. The different behavior of the reduced slopes (Formula presented) in these two types of samples can also be understood in this context.

原文英語
頁(從 - 到)6047-6050
頁數4
期刊Physical Review B - Condensed Matter and Materials Physics
59
發行號9
DOIs
出版狀態已發佈 - 1999 一月 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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