TY - JOUR
T1 - Angular dependence of tunneling magnetoresistance in La 0.7Sr0.3MnO3 step-edge junctions
AU - Wang, L. M.
AU - Lee, Jyh Yi
AU - Yang, Hong-Chang
AU - Chen, J. C.
AU - Liu, Hsiang Lin
AU - Lu, Kun Sheng
AU - Horng, Lance
AU - Horng, Herng-Er
N1 - Funding Information:
This work was supported by the National Science Council, Taiwan, under Grant Nos. NSC 93-2112-M-212-001, NSC 92-2623-7-212-006, and the Ministry of Economic Affairs under Grant 92-EC-17-A-01-S1-026. This work was also partially supported by the Da-Yeh University under Grant Nos. DEE-9122 and ORD-9303.
PY - 2006/3
Y1 - 2006/3
N2 - La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been fabricated on step-edge (0 0 1) SrTiO3 substrates with a high step-edge angle. In the measurement of magnetoresistance (MR) ratio versus external magnetic field H, butterfly-like MR curves are clearly observed. The MR(H) curves vary with θ, the angle between the applied magnetic field and the current direction in the substrate plane, showing anisotropic MR properties. A much broader MR(H) response is observed for the configuration of H perpendicular to the substrate plane. Additionally, the maxima-MR field Hp almost coincides with the coercive field Hc for θ<60° but obeys a different form from Hc(θ). The high-field junction resistance shows an intrinsic sin2θ angular dependence, while the low-field resistance shows an extrinsic cos(4θ) angular dependence. The distinctive features are mainly due to the induced magnetization anisotropy in the artificial steps of grain boundaries.
AB - La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been fabricated on step-edge (0 0 1) SrTiO3 substrates with a high step-edge angle. In the measurement of magnetoresistance (MR) ratio versus external magnetic field H, butterfly-like MR curves are clearly observed. The MR(H) curves vary with θ, the angle between the applied magnetic field and the current direction in the substrate plane, showing anisotropic MR properties. A much broader MR(H) response is observed for the configuration of H perpendicular to the substrate plane. Additionally, the maxima-MR field Hp almost coincides with the coercive field Hc for θ<60° but obeys a different form from Hc(θ). The high-field junction resistance shows an intrinsic sin2θ angular dependence, while the low-field resistance shows an extrinsic cos(4θ) angular dependence. The distinctive features are mainly due to the induced magnetization anisotropy in the artificial steps of grain boundaries.
KW - Magnetic properties of thin films
KW - Magnetic thin film devices
KW - Tunneling
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U2 - 10.1016/j.jmmm.2005.03.005
DO - 10.1016/j.jmmm.2005.03.005
M3 - Article
AN - SCOPUS:27744446276
VL - 298
SP - 48
EP - 55
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
IS - 1
ER -