Angular dependence of tunneling magnetoresistance in La 0.7Sr0.3MnO3 step-edge junctions

L. M. Wang; Jyh Yi Lee; H. C. Yang; J. C. Chen; Hsiang Lin Liu; Kun Sheng Lu; Lance Horng; H. E. Horng

doi:10.1016/j.jmmm.2005.03.005

Angular dependence of tunneling magnetoresistance in La _0.7Sr_0.3MnO₃ step-edge junctions

L. M. Wang^*, Jyh Yi Lee, H. C. Yang, J. C. Chen, Hsiang Lin Liu, Kun Sheng Lu, Lance Horng, H. E. Horng

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

La_0.7Sr_0.3MnO₃ (LSMO) tunneling magnetoresistance (TMR) junctions have been fabricated on step-edge (0 0 1) SrTiO₃ substrates with a high step-edge angle. In the measurement of magnetoresistance (MR) ratio versus external magnetic field H, butterfly-like MR curves are clearly observed. The MR(H) curves vary with θ, the angle between the applied magnetic field and the current direction in the substrate plane, showing anisotropic MR properties. A much broader MR(H) response is observed for the configuration of H perpendicular to the substrate plane. Additionally, the maxima-MR field H_p almost coincides with the coercive field H_c for θ<60° but obeys a different form from Hc(θ). The high-field junction resistance shows an intrinsic sin2θ angular dependence, while the low-field resistance shows an extrinsic cos(4θ) angular dependence. The distinctive features are mainly due to the induced magnetization anisotropy in the artificial steps of grain boundaries.

原文	英語
頁（從 - 到）	48-55
頁數	8
期刊	Journal of Magnetism and Magnetic Materials
卷	298
發行號	1
DOIs	https://doi.org/10.1016/j.jmmm.2005.03.005
出版狀態	已發佈 - 2006 3月

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學

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10.1016/j.jmmm.2005.03.005

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@article{2b0b34cf74a24ab8a8429d404c35d7e6,

title = "Angular dependence of tunneling magnetoresistance in La 0.7Sr0.3MnO3 step-edge junctions",

abstract = "La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been fabricated on step-edge (0 0 1) SrTiO3 substrates with a high step-edge angle. In the measurement of magnetoresistance (MR) ratio versus external magnetic field H, butterfly-like MR curves are clearly observed. The MR(H) curves vary with θ, the angle between the applied magnetic field and the current direction in the substrate plane, showing anisotropic MR properties. A much broader MR(H) response is observed for the configuration of H perpendicular to the substrate plane. Additionally, the maxima-MR field Hp almost coincides with the coercive field Hc for θ<60° but obeys a different form from Hc(θ). The high-field junction resistance shows an intrinsic sin2θ angular dependence, while the low-field resistance shows an extrinsic cos(4θ) angular dependence. The distinctive features are mainly due to the induced magnetization anisotropy in the artificial steps of grain boundaries.",

keywords = "Magnetic properties of thin films, Magnetic thin film devices, Tunneling",

author = "Wang, {L. M.} and Lee, {Jyh Yi} and Yang, {H. C.} and Chen, {J. C.} and Liu, {Hsiang Lin} and Lu, {Kun Sheng} and Lance Horng and Horng, {H. E.}",

note = "Funding Information: This work was supported by the National Science Council, Taiwan, under Grant Nos. NSC 93-2112-M-212-001, NSC 92-2623-7-212-006, and the Ministry of Economic Affairs under Grant 92-EC-17-A-01-S1-026. This work was also partially supported by the Da-Yeh University under Grant Nos. DEE-9122 and ORD-9303.",

year = "2006",

month = mar,

doi = "10.1016/j.jmmm.2005.03.005",

language = "English",

volume = "298",

pages = "48--55",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "1",

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TY - JOUR

T1 - Angular dependence of tunneling magnetoresistance in La 0.7Sr0.3MnO3 step-edge junctions

AU - Wang, L. M.

AU - Lee, Jyh Yi

AU - Yang, H. C.

AU - Chen, J. C.

AU - Liu, Hsiang Lin

AU - Lu, Kun Sheng

AU - Horng, Lance

AU - Horng, H. E.

N1 - Funding Information: This work was supported by the National Science Council, Taiwan, under Grant Nos. NSC 93-2112-M-212-001, NSC 92-2623-7-212-006, and the Ministry of Economic Affairs under Grant 92-EC-17-A-01-S1-026. This work was also partially supported by the Da-Yeh University under Grant Nos. DEE-9122 and ORD-9303.

PY - 2006/3

Y1 - 2006/3

N2 - La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been fabricated on step-edge (0 0 1) SrTiO3 substrates with a high step-edge angle. In the measurement of magnetoresistance (MR) ratio versus external magnetic field H, butterfly-like MR curves are clearly observed. The MR(H) curves vary with θ, the angle between the applied magnetic field and the current direction in the substrate plane, showing anisotropic MR properties. A much broader MR(H) response is observed for the configuration of H perpendicular to the substrate plane. Additionally, the maxima-MR field Hp almost coincides with the coercive field Hc for θ<60° but obeys a different form from Hc(θ). The high-field junction resistance shows an intrinsic sin2θ angular dependence, while the low-field resistance shows an extrinsic cos(4θ) angular dependence. The distinctive features are mainly due to the induced magnetization anisotropy in the artificial steps of grain boundaries.

AB - La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been fabricated on step-edge (0 0 1) SrTiO3 substrates with a high step-edge angle. In the measurement of magnetoresistance (MR) ratio versus external magnetic field H, butterfly-like MR curves are clearly observed. The MR(H) curves vary with θ, the angle between the applied magnetic field and the current direction in the substrate plane, showing anisotropic MR properties. A much broader MR(H) response is observed for the configuration of H perpendicular to the substrate plane. Additionally, the maxima-MR field Hp almost coincides with the coercive field Hc for θ<60° but obeys a different form from Hc(θ). The high-field junction resistance shows an intrinsic sin2θ angular dependence, while the low-field resistance shows an extrinsic cos(4θ) angular dependence. The distinctive features are mainly due to the induced magnetization anisotropy in the artificial steps of grain boundaries.

KW - Magnetic properties of thin films

KW - Magnetic thin film devices

KW - Tunneling

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DO - 10.1016/j.jmmm.2005.03.005

M3 - Article

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SN - 0304-8853

VL - 298

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EP - 55

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1

ER -

Angular dependence of tunneling magnetoresistance in La 0.7Sr0.3MnO3 step-edge junctions

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Angular dependence of tunneling magnetoresistance in La _0.7Sr_0.3MnO₃ step-edge junctions