TY - JOUR
T1 - Analysis of tunable transmission properties in photonic crystals containing doped semiconductor
AU - Chang, Yang Hua
AU - Ou, Ming De
AU - Wu, Chien Jang
PY - 2014/6/15
Y1 - 2014/6/15
N2 - We investigate the tunable transmission properties in a photonic crystal (PC) that contains doped semiconductor, n-GaAs, as a defect layer. With the existence of n-GaAs, the defect modes can be tuned by external magnetic field, doping concentration, and thickness of the defect layer. Among these three factors, the thickness of the defect layer is the most effective one. The analysis made is the near infrared region and the results are of technical use in the design of a filter with narrowband transmittance peaks.
AB - We investigate the tunable transmission properties in a photonic crystal (PC) that contains doped semiconductor, n-GaAs, as a defect layer. With the existence of n-GaAs, the defect modes can be tuned by external magnetic field, doping concentration, and thickness of the defect layer. Among these three factors, the thickness of the defect layer is the most effective one. The analysis made is the near infrared region and the results are of technical use in the design of a filter with narrowband transmittance peaks.
KW - Photonic crystal
KW - Transfer matrix method
KW - Tunable transmission
UR - http://www.scopus.com/inward/record.url?scp=84894595922&partnerID=8YFLogxK
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U2 - 10.1016/j.optcom.2014.01.081
DO - 10.1016/j.optcom.2014.01.081
M3 - Article
AN - SCOPUS:84894595922
VL - 321
SP - 167
EP - 171
JO - Optics Communications
JF - Optics Communications
SN - 0030-4018
ER -