Analysis of Si:C on relaxed SiGe by reciprocal space mapping for MOSFET applications

M. H. Lee, P. G. Chen, S. T. Chang

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

Silicon-germanium (SiGe) or siliconcarbon alloys (Si:C) are used as embedded stressors in silicon devices since they increase the channel strain and the performance as a result of the lattice mismatch. The strain properties of silicon with carbon doped on a relaxed SiGe virtual substrate are examined using reciprocal space mapping. Due to the ~52% lattice mismatch between silicon and carbon, the silicon with a carbon-doped surface channel is under greater strain than it on a relaxed SiGe virtual substrate. This suggests that the carrier mobility could be significantly enhanced. The extracted electron mobility of a n-type metal-oxide-semiconductor field-effect transistor (MOSFET) device with 0.25% carbon shows the enhancement of 22% and 65% for the peak mobility and a large electric field (1 MV/cm), respectively.

原文英語
頁(從 - 到)P259-P262
期刊ECS Journal of Solid State Science and Technology
3
發行號7
DOIs
出版狀態已發佈 - 2014

ASJC Scopus subject areas

  • 電子、光磁材料

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