摘要
Silicon-germanium (SiGe) or siliconcarbon alloys (Si:C) are used as embedded stressors in silicon devices since they increase the channel strain and the performance as a result of the lattice mismatch. The strain properties of silicon with carbon doped on a relaxed SiGe virtual substrate are examined using reciprocal space mapping. Due to the ~52% lattice mismatch between silicon and carbon, the silicon with a carbon-doped surface channel is under greater strain than it on a relaxed SiGe virtual substrate. This suggests that the carrier mobility could be significantly enhanced. The extracted electron mobility of a n-type metal-oxide-semiconductor field-effect transistor (MOSFET) device with 0.25% carbon shows the enhancement of 22% and 65% for the peak mobility and a large electric field (1 MV/cm), respectively.
原文 | 英語 |
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頁(從 - 到) | P259-P262 |
期刊 | ECS Journal of Solid State Science and Technology |
卷 | 3 |
發行號 | 7 |
DOIs | |
出版狀態 | 已發佈 - 2014 |
ASJC Scopus subject areas
- 電子、光磁材料