Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain

Min-Hung Lee*, S. T. Chang, B. F. Hsieh, J. J. Huang, C. C. Lee

*此作品的通信作者

    研究成果: 雜誌貢獻期刊論文同行評審

    2 引文 斯高帕斯(Scopus)

    摘要

    The gap state density of nano-crystalline silicon active layers on a flexible substrate was redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain, the deep states redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states, which manifest with exponential distributions. We conclude that the gap state density with TCAD modeling under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

    原文英語
    頁(從 - 到)10485-10488
    頁數4
    期刊Journal of Nanoscience and Nanotechnology
    11
    發行號12
    DOIs
    出版狀態已發佈 - 2011 十二月 1

    ASJC Scopus subject areas

    • 生物工程
    • 化學 (全部)
    • 生物醫學工程
    • 材料科學(全部)
    • 凝聚態物理學

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