An X-band half-watt CMOS power amplifier using interweaved parallel combining transformer

Jeng Han Tsai, Jen Wei Wang

研究成果: 雜誌貢獻文章

7 引文 (Scopus)

摘要

An X-band half-watt fully integrated power amplifier (PA) using standard 0.18-μm 1P6M CMOS technology is presented in this letter. Utilizing an interweaved three-primary parallel combining transformer, the CMOS PA delivers 27.1 dBm of measured saturation output power (Psat) with 22.7% of power-added efficiency at 9 GHz from a 3.3-V power supply. The measured output 1-dB gain compression point (OP1 dB) is 24.2 dBm and the gain performance is 11.2 dB at 9 GHz. The chip size is 1.045 × 0.84 mm2. To the best of our knowledge, the PA is the first half-watt CMOS PA with excellent power density at the X-band.

原文英語
文章編號7906581
頁(從 - 到)491-493
頁數3
期刊IEEE Microwave and Wireless Components Letters
27
發行號5
DOIs
出版狀態已發佈 - 2017 五月 1

指紋

power amplifiers
superhigh frequencies
Power amplifiers
transformers
CMOS
output
power efficiency
power supplies
radiant flux density
chips
saturation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此文

An X-band half-watt CMOS power amplifier using interweaved parallel combining transformer. / Tsai, Jeng Han; Wang, Jen Wei.

於: IEEE Microwave and Wireless Components Letters, 卷 27, 編號 5, 7906581, 01.05.2017, p. 491-493.

研究成果: 雜誌貢獻文章

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