@article{a82d56938d5d4dde88d8ca04db95c4d2,
title = "An X-Band 29.6-dBm CMOS Power Amplifier Using Folded Radial Splitter and Binary Combiner Network",
abstract = "An X-band fully integrated power amplifier (PA) has been designed and fabricated on CMOS technology. Utilizing a transformer-based folded radial power splitter and binary power combiner network, the CMOS PA delivers 29.6 dBm saturation power (Psat) at 11 GHz. The measured gain is 11.2 dB, the output of 1-dB compression point (OP1dB) is 28.2 dBm, and the peak power-added efficiency (PAE) is 15.5% at 11 GHz. To our knowledge, the PA achieves the highest Psat and the highest OP1dB among other reported CMOS PAs around X-band to date.",
keywords = "CMOS, fully integration, power amplifier (PA), transformer, X-band",
author = "Tsai, {Jeng Han} and Tiku Yu and Huang, {Wang Lung}",
note = "Funding Information: Manuscript received May 9, 2019; revised June 19, 2019; accepted July 7, 2019. Date of publication August 21, 2019; date of current version September 4, 2019. This work was supported by the Ministry of Science and Technology of Taiwan under Grant MOST 107-2221-E-003-003 and Grant MOST 107-2221-E-003-004-MY2. (Corresponding author: Jeng-Han Tsai.) J.-H. Tsai and W.-L. Huang are with the Department of Electrical Engineering, National Taiwan Normal University, Taipei 10610, Taiwan (e-mail:jhtsai@ntnu.edu.tw). Publisher Copyright: {\textcopyright} 2001-2012 IEEE.",
year = "2019",
month = sep,
doi = "10.1109/LMWC.2019.2931453",
language = "English",
volume = "29",
pages = "607--609",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",
}