An X-Band 29.6-dBm CMOS Power Amplifier Using Folded Radial Splitter and Binary Combiner Network

Jeng Han Tsai; Tiku Yu; Wang Lung Huang

doi:10.1109/LMWC.2019.2931453

An X-Band 29.6-dBm CMOS Power Amplifier Using Folded Radial Splitter and Binary Combiner Network

Jeng Han Tsai^*, Tiku Yu, Wang Lung Huang

^*此作品的通信作者

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

An X-band fully integrated power amplifier (PA) has been designed and fabricated on CMOS technology. Utilizing a transformer-based folded radial power splitter and binary power combiner network, the CMOS PA delivers 29.6 dBm saturation power (P_sat) at 11 GHz. The measured gain is 11.2 dB, the output of 1-dB compression point (OP_1dB) is 28.2 dBm, and the peak power-added efficiency (PAE) is 15.5% at 11 GHz. To our knowledge, the PA achieves the highest P_sat and the highest OP_1dB among other reported CMOS PAs around X-band to date.

原文	英語
文章編號	8807336
頁（從 - 到）	607-609
頁數	3
期刊	IEEE Microwave and Wireless Components Letters
卷	29
發行號	9
DOIs	https://doi.org/10.1109/LMWC.2019.2931453
出版狀態	已發佈 - 2019 9月

ASJC Scopus subject areas

凝聚態物理學
電氣與電子工程

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10.1109/LMWC.2019.2931453

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引用此

@article{a82d56938d5d4dde88d8ca04db95c4d2,

title = "An X-Band 29.6-dBm CMOS Power Amplifier Using Folded Radial Splitter and Binary Combiner Network",

abstract = "An X-band fully integrated power amplifier (PA) has been designed and fabricated on CMOS technology. Utilizing a transformer-based folded radial power splitter and binary power combiner network, the CMOS PA delivers 29.6 dBm saturation power (Psat) at 11 GHz. The measured gain is 11.2 dB, the output of 1-dB compression point (OP1dB) is 28.2 dBm, and the peak power-added efficiency (PAE) is 15.5% at 11 GHz. To our knowledge, the PA achieves the highest Psat and the highest OP1dB among other reported CMOS PAs around X-band to date.",

keywords = "CMOS, X-band, fully integration, power amplifier (PA), transformer",

author = "Tsai, {Jeng Han} and Tiku Yu and Huang, {Wang Lung}",

note = "Publisher Copyright: {\textcopyright} 2001-2012 IEEE.",

year = "2019",

month = sep,

doi = "10.1109/LMWC.2019.2931453",

language = "English",

volume = "29",

pages = "607--609",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - An X-Band 29.6-dBm CMOS Power Amplifier Using Folded Radial Splitter and Binary Combiner Network

AU - Tsai, Jeng Han

AU - Yu, Tiku

AU - Huang, Wang Lung

PY - 2019/9

Y1 - 2019/9

N2 - An X-band fully integrated power amplifier (PA) has been designed and fabricated on CMOS technology. Utilizing a transformer-based folded radial power splitter and binary power combiner network, the CMOS PA delivers 29.6 dBm saturation power (Psat) at 11 GHz. The measured gain is 11.2 dB, the output of 1-dB compression point (OP1dB) is 28.2 dBm, and the peak power-added efficiency (PAE) is 15.5% at 11 GHz. To our knowledge, the PA achieves the highest Psat and the highest OP1dB among other reported CMOS PAs around X-band to date.

AB - An X-band fully integrated power amplifier (PA) has been designed and fabricated on CMOS technology. Utilizing a transformer-based folded radial power splitter and binary power combiner network, the CMOS PA delivers 29.6 dBm saturation power (Psat) at 11 GHz. The measured gain is 11.2 dB, the output of 1-dB compression point (OP1dB) is 28.2 dBm, and the peak power-added efficiency (PAE) is 15.5% at 11 GHz. To our knowledge, the PA achieves the highest Psat and the highest OP1dB among other reported CMOS PAs around X-band to date.

KW - CMOS

KW - X-band

KW - fully integration

KW - power amplifier (PA)

KW - transformer

UR - http://www.scopus.com/inward/record.url?scp=85072025441&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072025441&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2019.2931453

DO - 10.1109/LMWC.2019.2931453

M3 - Article

AN - SCOPUS:85072025441

SN - 1531-1309

VL - 29

SP - 607

EP - 609

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 9

M1 - 8807336

ER -

An X-Band 29.6-dBm CMOS Power Amplifier Using Folded Radial Splitter and Binary Combiner Network

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