An X-Band 29.6-dBm CMOS Power Amplifier Using Folded Radial Splitter and Binary Combiner Network

Jeng Han Tsai*, Tiku Yu, Wang Lung Huang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

An X-band fully integrated power amplifier (PA) has been designed and fabricated on CMOS technology. Utilizing a transformer-based folded radial power splitter and binary power combiner network, the CMOS PA delivers 29.6 dBm saturation power (Psat) at 11 GHz. The measured gain is 11.2 dB, the output of 1-dB compression point (OP1dB) is 28.2 dBm, and the peak power-added efficiency (PAE) is 15.5% at 11 GHz. To our knowledge, the PA achieves the highest Psat and the highest OP1dB among other reported CMOS PAs around X-band to date.

原文英語
文章編號8807336
頁(從 - 到)607-609
頁數3
期刊IEEE Microwave and Wireless Components Letters
29
發行號9
DOIs
出版狀態已發佈 - 2019 九月

ASJC Scopus subject areas

  • 凝聚態物理學
  • 電氣與電子工程

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