An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

Hsiao Hsuan Hsu; Chun Yen Chang; Chun Hu Cheng; Shan Haw Chiou; Chiung Hui Huang; Yu Chien Chiu

doi:10.1109/TNANO.2014.2332395

An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

Hsiao Hsuan Hsu
, Chun Yen Chang
, Chun Hu Cheng
, Shan Haw Chiou
, Chiung Hui Huang
, Yu Chien Chiu

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

17 引文斯高帕斯（Scopus）

摘要

This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO:Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm²/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO:Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.

原文	英語
文章編號	6841632
頁（從 - 到）	933-938
頁數	6
期刊	IEEE Transactions on Nanotechnology
卷	13
發行號	5
DOIs	https://doi.org/10.1109/TNANO.2014.2332395
出版狀態	已發佈 - 2014 9月

ASJC Scopus subject areas

電腦科學應用
電氣與電子工程

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10.1109/TNANO.2014.2332395

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引用此

@article{304a3c1183b04f9fad62c1d308d26b4a,

title = "An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor",

abstract = "This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO:Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm2/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO:Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.",

keywords = "Gettering, InGaZnO (IGZO), thin-film transistor (TFT)",

author = "Hsu, \{Hsiao Hsuan\} and Chang, \{Chun Yen\} and Cheng, \{Chun Hu\} and Chiou, \{Shan Haw\} and Huang, \{Chiung Hui\} and Chiu, \{Yu Chien\}",

note = "Publisher Copyright: {\textcopyright} 2002-2012 IEEE.",

year = "2014",

month = sep,

doi = "10.1109/TNANO.2014.2332395",

language = "English",

volume = "13",

pages = "933--938",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

AU - Hsu, Hsiao Hsuan

AU - Chang, Chun Yen

AU - Cheng, Chun Hu

AU - Chiou, Shan Haw

AU - Huang, Chiung Hui

AU - Chiu, Yu Chien

PY - 2014/9

Y1 - 2014/9

N2 - This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO:Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm2/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO:Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.

AB - This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO:Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm2/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO:Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.

KW - Gettering

KW - InGaZnO (IGZO)

KW - thin-film transistor (TFT)

UR - https://www.scopus.com/pages/publications/84944718534

UR - https://www.scopus.com/pages/publications/84944718534#tab=citedBy

U2 - 10.1109/TNANO.2014.2332395

DO - 10.1109/TNANO.2014.2332395

M3 - Article

AN - SCOPUS:84944718534

SN - 1536-125X

VL - 13

SP - 933

EP - 938

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 5

M1 - 6841632

ER -

An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

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ASJC Scopus subject areas

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