An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng, Shan Haw Chiou, Chiung Hui Huang, Yu Chien Chiu

研究成果: 雜誌貢獻文章

11 引文 斯高帕斯(Scopus)

摘要

This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO:Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm2/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO:Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.

原文英語
文章編號6841632
頁(從 - 到)933-938
頁數6
期刊IEEE Transactions on Nanotechnology
13
發行號5
DOIs
出版狀態已發佈 - 2014 九月

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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