An investigation of smooth nano-sized copper seed layers on TiN and TaSiN by new non-toxic electroless plating

R. S. Liu*, C. C. You, M. S. Tsai, S. F. Hu, Y. H. Li, C. P. Lu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

The purpose of this research is to explore the properties of a copper seed layer grown by electroless plating on TiN. We have developed a displacement layer made of amorphous silicon (a-Si) and copper contact displacement process to improve the island structure of copper activated layer which can then be grown directly on the surface of TiN. Furthermore, this research proposes glyoxylic acid as replacements to formaldehyde, which is commonly used at present as a reductant but regarded as a carcinogen, and is of high volatility. The copper seed layer has been grown by electroless plating on an activated surface of TiN, at the set temperature of 60 °C with the plating bath consisting of the copper source, complexing agent, stabilizer and surfactant. The existence of a copper seed layer provides not only the conduction layer, but also the copper nucleation layer, to help the growth of electroplated copper on the surface of TiN. Moreover, based on the results of the studies can lead us to grow a smooth nano-sized Cu seed layer on the top of a TaSiN layer.

原文英語
頁(從 - 到)445-448
頁數4
期刊Solid State Communications
125
發行號7-8
DOIs
出版狀態已發佈 - 2003 2月
對外發佈

ASJC Scopus subject areas

  • 化學 (全部)
  • 凝聚態物理學
  • 材料化學

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