An E-band transformer-based 90-nm CMOS LNA

Jeng Han Tsai, Chuan Chi Hung, Jen Hao Cheng, Chen Fang Lin, Ruei An Chang

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

摘要

This paper present an E-band transformer-based three-stage low-noise amplifier (LNA) in 90-nm CMOS process. The common-source (CS) and cascode configuration are selected to achieve high gain and low noise requirements in LNA design. A noise reduction technique is utilized to suppress the extra noise induced by cascode configuration. For impedance transformation and compact chip area, transformers are utilized in the inter-stage and output matching. This LNA demonstrates a 20.2-dB gain and a noise figure (NF) of 8.8 dB at 67 GHz with a compact chip size of 0.38 mm2. The dc power is 15.4 mW.

原文英語
主出版物標題2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面660-662
頁數3
ISBN(電子)9784902339451
DOIs
出版狀態已發佈 - 2019 一月 16
事件30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, 日本
持續時間: 2018 十一月 62018 十一月 9

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC
2018-November

會議

會議30th Asia-Pacific Microwave Conference, APMC 2018
國家日本
城市Kyoto
期間18/11/618/11/9

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • 引用此

    Tsai, J. H., Hung, C. C., Cheng, J. H., Lin, C. F., & Chang, R. A. (2019). An E-band transformer-based 90-nm CMOS LNA. 於 2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings (頁 660-662). [8617616] (Asia-Pacific Microwave Conference Proceedings, APMC; 卷 2018-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/APMC.2018.8617616