Amorphous titanium oxide semiconductors on Quasi-crystal-like InGaZnO channels for thin film transistor applications

Hsiao Hsuan Hsu, Ping Chiou, Chun Hu Cheng*, Shiang Shiou Yen, Chien Hung Tung, Chun Yen Chang, Yu Chien Lai, Hung Wei Li, Chih Pang Chang, Hsueh Hsing Lu, Ching Sang Chuang, Yu Hsin Lin

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

This paper reports an InGaZnO thin-film transistor with titanium-oxide semiconductor as channel capping layer. Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near source/drain contacts, but also a mobility booster to enhance electric field across channel. Compared to control IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor exhibits an improved performance of a low drive voltage of <5 V, a low threshold voltage of 1.9 V, a low sub-threshold swing of 244 mV/decade , and a high mobility of 13.7 cm2/V·s. The simple titanium-oxide capping process have been demonstrated in this work, which provides considerable potential for further display applications requiring a low power operation and a low-temperature fabrication.

原文英語
文章編號6887354
頁(從 - 到)506-511
頁數6
期刊IEEE/OSA Journal of Display Technology
11
發行號6
DOIs
出版狀態已發佈 - 2015 六月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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