Amorphous titanium oxide semiconductors on Quasi-crystal-like InGaZnO channels for thin film transistor applications

Hsiao Hsuan Hsu, Ping Chiou, Chun Hu Cheng, Shiang Shiou Yen, Chien Hung Tung, Chun Yen Chang, Yu Chien Lai, Hung Wei Li, Chih Pang Chang, Hsueh Hsing Lu, Ching Sang Chuang, Yu Hsin Lin

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

This paper reports an InGaZnO thin-film transistor with titanium-oxide semiconductor as channel capping layer. Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near source/drain contacts, but also a mobility booster to enhance electric field across channel. Compared to control IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor exhibits an improved performance of a low drive voltage of <5 V, a low threshold voltage of 1.9 V, a low sub-threshold swing of 244 mV/decade , and a high mobility of 13.7 cm2/V·s. The simple titanium-oxide capping process have been demonstrated in this work, which provides considerable potential for further display applications requiring a low power operation and a low-temperature fabrication.

原文英語
文章編號6887354
頁(從 - 到)506-511
頁數6
期刊IEEE/OSA Journal of Display Technology
11
發行號6
DOIs
出版狀態已發佈 - 2015 六月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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