A low-cost process with electron beam evaporator deposition for amorphous layers was demonstrated in hetero-junction with intrinsic thin layer (HIT) solar cell. The cleaning process with saw damage removal procedure and the annealing temperature are also discussed in this work. The open-circuit voltage (Voc) and short-circuit current density (Jsc) were obtained as 285 mV and 2.9 mA/cm2, respectively, with 5 min saw damage removal and 450°C forming gas annealing. Therefore, the low-cost process with the electron beam evaporator deposition could possibly fabricate the HIT solar cell and be a candidate for future higher performance photovoltaic device with optimisation process condition.
|頁（從 - 到）||485-491|
|期刊||International Journal of Nanotechnology|
|出版狀態||已發佈 - 2016|
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