Amorphous bilayer TiO2-InGaZnO thin film transistors with low drive voltage

Hsiao Hsuan Hsu, Chun Hu Cheng*, Ping Chiou, Yu Chien Chiu, Chun Yen Chang, Zhi Wei Zheng

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

9 引文 斯高帕斯(Scopus)

摘要

This paper describes a high-performance thin-film transistor (TFT) fabricated using TiO2 and InGaZnO semiconducting layers. Favorable transistor characteristics, including a low threshold voltage of 0.45 V, a small subthreshold swing of 174 mV/decade, and a high field effect mobility of 19 cm2/V s at a low drive voltage of <2 V, were achieved. This favorable performance mainly resulted from the combined effect of the high-dielectric-constant gate dielectric and the TiO2-InGaZnO active semiconductor bilayer, which reduced the operating voltage, enhanced the device mobility, and improved the transistor gate swing. This TiO2-InGaZnO TFT exhibits great potential for future high-speed and high-resolution display applications.

原文英語
頁(從 - 到)51-54
頁數4
期刊Solid-State Electronics
99
DOIs
出版狀態已發佈 - 2014 九月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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