Adsorption and thermal decomposition of H2S on Si(100)

Ying Huang Lai; Chuin Tih Yeh; Yi Hsin Lin; Wei Hsiu Hung

doi:10.1016/S0039-6028(02)02208-2

Adsorption and thermal decomposition of H₂S on Si(100)

Ying Huang Lai, Chuin Tih Yeh, Yi Hsin Lin, Wei Hsiu Hung^*

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

21 引文斯高帕斯（Scopus）

摘要

Adsorption and thermal decomposition of H₂S on Si(100)-2×1 are studied by means of temperature-programmed desorption (TPD) and X-ray photoemission spectroscopy (XPS) with synchrotron radiation. The H₂S molecule dissociates to form H and HS on the Si surface at adsorption temperature of 115 K. The Si(100)-2×1 surface structure is conserved upon the adsorption of H₂S due to bonding of dissociative H and HS on two Si atoms in a dimer without breaking the Si-Si dimer bond. H₂ and SiS are the only desorption products of thermal decomposition of H₂S with peaks at 780 and 820 K, respectively. On the basis of TPD and XPS results, intermediates involved in decomposition of H₂S and their adsorption configurations are proposed and discussed.

原文	英語
頁（從 - 到）	150-156
頁數	7
期刊	Surface Science
卷	519
發行號	1-2
DOIs	https://doi.org/10.1016/S0039-6028(02)02208-2
出版狀態	已發佈 - 2002 11月 1
對外發佈	是

ASJC Scopus subject areas

凝聚態物理學
表面和介面
表面、塗料和薄膜
材料化學

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10.1016/S0039-6028(02)02208-2

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@article{bbedb11da2184ab5866199ce8df6088a,

title = "Adsorption and thermal decomposition of H2S on Si(100)",

abstract = "Adsorption and thermal decomposition of H2S on Si(100)-2×1 are studied by means of temperature-programmed desorption (TPD) and X-ray photoemission spectroscopy (XPS) with synchrotron radiation. The H2S molecule dissociates to form H and HS on the Si surface at adsorption temperature of 115 K. The Si(100)-2×1 surface structure is conserved upon the adsorption of H2S due to bonding of dissociative H and HS on two Si atoms in a dimer without breaking the Si-Si dimer bond. H2 and SiS are the only desorption products of thermal decomposition of H2S with peaks at 780 and 820 K, respectively. On the basis of TPD and XPS results, intermediates involved in decomposition of H2S and their adsorption configurations are proposed and discussed.",

keywords = "Hydrogen sulphide, Silicon, Thermal desorption, X-ray photoelectron spectroscopy",

author = "Lai, {Ying Huang} and Yeh, {Chuin Tih} and Lin, {Yi Hsin} and Hung, {Wei Hsiu}",

note = "Funding Information: This work was supported by SRRC and National Science Council under grant no. NSC91-2113-M-213-003.",

year = "2002",

month = nov,

day = "1",

doi = "10.1016/S0039-6028(02)02208-2",

language = "English",

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TY - JOUR

T1 - Adsorption and thermal decomposition of H2S on Si(100)

AU - Lai, Ying Huang

AU - Yeh, Chuin Tih

AU - Lin, Yi Hsin

AU - Hung, Wei Hsiu

N1 - Funding Information: This work was supported by SRRC and National Science Council under grant no. NSC91-2113-M-213-003.

PY - 2002/11/1

Y1 - 2002/11/1

N2 - Adsorption and thermal decomposition of H2S on Si(100)-2×1 are studied by means of temperature-programmed desorption (TPD) and X-ray photoemission spectroscopy (XPS) with synchrotron radiation. The H2S molecule dissociates to form H and HS on the Si surface at adsorption temperature of 115 K. The Si(100)-2×1 surface structure is conserved upon the adsorption of H2S due to bonding of dissociative H and HS on two Si atoms in a dimer without breaking the Si-Si dimer bond. H2 and SiS are the only desorption products of thermal decomposition of H2S with peaks at 780 and 820 K, respectively. On the basis of TPD and XPS results, intermediates involved in decomposition of H2S and their adsorption configurations are proposed and discussed.

AB - Adsorption and thermal decomposition of H2S on Si(100)-2×1 are studied by means of temperature-programmed desorption (TPD) and X-ray photoemission spectroscopy (XPS) with synchrotron radiation. The H2S molecule dissociates to form H and HS on the Si surface at adsorption temperature of 115 K. The Si(100)-2×1 surface structure is conserved upon the adsorption of H2S due to bonding of dissociative H and HS on two Si atoms in a dimer without breaking the Si-Si dimer bond. H2 and SiS are the only desorption products of thermal decomposition of H2S with peaks at 780 and 820 K, respectively. On the basis of TPD and XPS results, intermediates involved in decomposition of H2S and their adsorption configurations are proposed and discussed.

KW - Hydrogen sulphide

KW - Silicon

KW - Thermal desorption

KW - X-ray photoelectron spectroscopy

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U2 - 10.1016/S0039-6028(02)02208-2

DO - 10.1016/S0039-6028(02)02208-2

M3 - Article

AN - SCOPUS:0036838650

SN - 0039-6028

VL - 519

SP - 150

EP - 156

JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

Adsorption and thermal decomposition of H2S on Si(100)

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Adsorption and thermal decomposition of H₂S on Si(100)