摘要
The adsorption and thermal reaction of H2S on the InP(100) surface is studied by synchrotron radiation (SR) soft X-ray photoelectron spectroscopy. In addition to molecular adsorption, H2S decomposes to form the dissociative species of S, HS, and H on the surface at 100 K. The S atom of the sulfide species preferentially bonds to the In atom, and the H atom generated by the H2S dissociation bonds to the P atom. H2S molecules may physisorb on the surface in the form of an icelike multilayer/cluster at low temperatures, even at low coverages. The irradiation of SR white light can induce an alternative reaction of H2S with the InP surface to form a thicker sulfur layer than that obtained by thermal deposition. The resulting sulfur layer may provide chemical protection for the InP substrate from further reaction.
| 原文 | 英語 |
|---|---|
| 頁(從 - 到) | 3663-3668 |
| 頁數 | 6 |
| 期刊 | Journal of Physical Chemistry B |
| 卷 | 103 |
| 發行號 | 18 |
| DOIs | |
| 出版狀態 | 已發佈 - 1999 5月 6 |
| 對外發佈 | 是 |
ASJC Scopus subject areas
- 物理與理論化學
- 表面、塗料和薄膜
- 材料化學
指紋
深入研究「Adsorption and decomposition of H2S on InP(100)」主題。共同形成了獨特的指紋。引用此
- APA
- Standard
- Harvard
- Vancouver
- Author
- BIBTEX
- RIS